nice performance!
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@Robbie
for proof of the NAND endurance, you need just pure physics and understanding of the technology processes of the diff. NAND created. There isn't a marketing intent, because it can be easily checked.
As the person who has a background in the Si wafers creation, chip cutting, layering/stacking of the final products I can tell you that there are just pure physics reasons for the endurance of the cells = then you can translate them into math or values.
First:
four levels of quality for the NAND chips are known (don't mix it with the cell levels). Standardized.
An example: quality of final chips based on the cutting of stacked wafers. There are specific quality aspects for the chips from the edge of the wafers stack and the wafer centre. Heavy science is behind it.
I will try to find a scientific document for a deeper understanding.
Btw - the same reason why we have different performance and lifespan from solar cells (similar approach).
Second:
P/E NAND Cycles - is not a "marketing" kind of tag. This is not properly understood.
Reasons:
- Due to the way NAND Flash memory works, it is required that a cell is erased before it can be written to.
- The process of erasing and then writing a cell is called a P/E cycle.
- Each time a cell is erased it is damaged or worn out, so there is a lifetime for each cell. This is exacerbated by the makeup of NAND Flash. A cell can only be erased as a block and is written as a page. The size of each block and page is dictated by the design of the NAND Flash chip, but a block consists of many pages. If the information in a cell changes, it is written to a different cell and the old data marked as ‘ready for deletion’. Then, the ‘good’ data in a block is moved elsewhere and the whole block erased.
Impact:
- the reason why SLC has P/E cycle value of about 60,000 (the reason why SLC NAND is so expensive)
- and 3D TLC range is about 500 - 3,000 (what a heavy range between consumer and enterprise/industrial usage)
- more P/E cycle value more quality-grade of the NAND chip = higher cost of the device.
More stacked 3D TLC = more capacity/performance and OFC more P/E Cycles due to less cell to cell interface in this technology= more endurance.
Back to the mentioned SSD details:
WD Blue is based on 64-layer (P/E impact) 3D TLC NAND SanDisk and Marvel 88S1074 controller (WAF impact)
vs.
Syno SAT is based on 96-layer (seems to be Intel) 3D TLC NAND , Phison PS3112-S12DC controller and NA7AG64A0A DRAM chips
Overprovisioned Syno SSD - another one key to heavy endurance:
- allowing extra space for the flash controller to manage incoming data
- improves wear-leveling and random write performance, and reduces the write amplification factor (WAF), thereby improving the endurance of NAND-based SSDs.
When the Marvel controller is targeted to the consumer-grade usage. Then the Phison is a pure enterprise. Another reason for different WAF values.
The WAF simple understanding - when the actual amount of written physical data is more than the amount of logical data that is written by the host (NAS).
Then the WAF is just a pure mathematical expression of this situation.
WAF formula = Bytes written to NAND / Bytes written (delivered) from host
Btw you can measure these dynamical data based on SMART (smartctl) attributes, where:
SMART 247 = host program page count
SMART 248 = background program page count
WAF = 1 + ( SMART248 / SMART247 )
SMART SSD Attributes implementation for Micron:
An ideal value of the WAF is = 1.0 .... no amplification is needed, e.g. when all writes are performed in sequence with large files. But it is too far from the consumer-grade NAS reality.
In the case of the WAF, you need to count also with a "self" increasing of the WAF due to host storage operation as scrub/dedupe/filesystem operations, even RAID parity, .... all of them generate additional I/O, which makes an impact on the WAF. And more WAF = less TBW = less lifetime.
Finally, when you take into consideration the simple math for the TBW (TB written) mentioned in my post:
'SSD capacity' x 'PE NAND Cycles' / 'WAF'
Some calc examples (GB to TB transformation by 1024)
and, near to reality:
as you can see the differences between these two models - from the endurance point of view - no marketing is there. Just pure physics dependencies.
When you need to go deep dive, you can read this doc:
This document discusses how several factors impact the Drive Endurance formula when used to calculate how much data can be written to a drive before it becomes unreliable. Selecting the right flash-based storage device for your application often demands a tradeoff between cost, capacity, and...
www.ni.com
Take it as a short consideration impulse to this discussion.
OFC:
there is still main question - a purpose of the SSD usage?
You can purchase every 4y new SSD with more capacity, better technology, performance and also endurance for same or less cost.
No doubt. And it is valid point.
But the TBW will remain as still easily checked value. Because the pure physics is behind. No marketing. For some.